1 edition 1.2 august 1999 FLM5359-4F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25.0 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1950 2900 - 1000 - -1.0 -2.0 -3.5 -5.0 - - 9.5 10.5 - -37- 35.5 36.5 - v ds = 5v, i ds = 90ma v ds = 5v, i ds = 1100ma v ds = 5v, v gs = 0v i gs = -90 a v ds =10v, i ds = 0.55 i dss (typ.), f = 5.3 ~ 5.9 ghz, z s =z l = 50 ohm f = 5.9 ghz, ? f = 10 mhz 2-tone test p out = 25.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 5.0 6.0 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch features ?high output power: p 1db = 36.5dbm (typ.) ?high gain: g 1db = 10.5db (typ.) ?high pae: add = 37% (typ.) ?low im 3 = -46dbc@po = 25.5dbm ?broad band: 5.3 ~ 5.9ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package description the FLM5359-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM5359-4F c-band internally matched fet output power & im 3 vs. input power v ds =10v f 1 = 5.9 ghz f 2 = 5.91ghz 2-tone test 8 10121416182022 input power (s.c.l.) (dbm) s.c.l.: single carrier level 24 26 28 30 32 22 20 -50 -40 -30 -20 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) power derating curve 12 6 24 30 18 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power vs. frequency pin=27dbm 22dbm 24dbm 20dbm 5.5 5.3 5.7 5.9 5.8 5.6 5.4 frequency (ghz) 37 38 35 36 34 33 32 31 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 5.6 ghz 20 16 18 22 24 26 28 input power (dbm) 34 36 38 32 30 28 30 45 15 output power (dbm) add p out add (%)
3 FLM5359-4F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 10 100 250 0.2 0.1 2 4 8 scale for |s 21 | 6 5.1ghz 5.1ghz 5.3 5.3 6.1 6.1 5.5 5.5 5.7 5.9 5.7 5.9 scale for |s 12 | 5.1ghz 5.1ghz 5.3 5.3 6.1 6.1 5.5 5.5 5.7 5.7 5.9 5.9 s-parameters v ds = 10v, i ds = 1100ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 5100 .363 -126.5 3.558 83.3 .048 48.4 .708 -18.0 5200 .341 -146.1 3.665 69.1 .054 31.8 .697 -27.6 5300 .317 -165.4 3.769 54.5 .062 14.5 .680 -38.0 5400 .287 175.9 3.887 39.5 .068 -0.5 .664 -49.3 5500 .244 156.5 4.001 23.8 .076 -17.8 .642 -62.2 5600 .189 136.3 4.092 7.2 .083 -33.6 .611 -76.7 5700 .116 113.0 4.150 -10.5 .089 -49.8 .579 -93.9 5800 .029 69.0 4.141 -29.0 .093 -67.8 .548 -113.2 5900 .082 -88.4 4.025 -48.1 .097 -83.5 .524 -134.1 6000 .195 -115.1 3.822 -67.5 .096 -100.3 .508 -156.3 6100 .309 -137.5 3.523 -86.8 .091 -117.0 .502 -178.2
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1999 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0499m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM5359-4F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3
|
